Type segmentation of the SiC epitaxial growth equipment market distinguishes three principal technologies: chemical vapor deposition (CVD), molecular beam epitaxy (MBE), and atomic layer deposition (ALD). CVD, which includes horizontal and vertical reactor configurations, dominates the market due to its scalability, high throughput, and ability to produce thick, uniform SiC layers required for power‑device substrates. Horizontal CVD systems are favored for large‑diameter wafers, while vertical CVD offers superior gas‑flow uniformity for thinner epitaxial films. MBE, though limited to research and low‑volume production, contributes a niche share by delivering atomically precise layers essential for high‑frequency and quantum‑device prototypes. ALD, emerging as a thin‑film solution, addresses the demand for conformal coatings on complex topographies, supporting advanced device architectures. The relative revenue contribution reflects these capabilities: CVD accounts for roughly 70 % of total equipment sales, MBE around 20 %, and ALD the remaining 10 %. This distribution underscores how technology maturity and production volume drive the overall market size.